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2SA1655 PNP transistors(BJT) -50V -100mA/-0.1A 250MHz 30 -100mV/-0.1V SOT-23/CP marking AS bias resistor

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
30
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applicationssilicon PNP epitaxial type high voltage and high current; Applications · Swicthing circuits, inverter circuits, interface circuits,driver circuits. Features · On-chip bias resistance : R1=4.7kΩ, R2=4.7kΩ.
描述与应用硅PNP外延型 高电压和高电流; 应用  ·Swicthing电路,逆变器电路,接口电路,驱动器电路。 特点  ·片上偏置电阻:R1=4.7kΩ上,R2=4.7kΩ的。
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