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2SK3783 JFET N-Channel 20v 0.21~0.35mA 4PXSLP04 marking BH low noise

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.21~0.35ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.37~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications•Silicon N-Channel Junction FET •High gain −0.5 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Low noise −109 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ) t = 0.3 mm TYP.
描述与应用•硅N沟道结型场效应管 •高增益 -0.5分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ的) •低噪音 -109分贝(VDS=2.0 V,C =5 pF的,RL=2.2kΩ上)  T =0.3毫米TYP。
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