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UP0431200L NPN+PNP Complex Bipolar Transistor 50V/-50V 100mA/-100mA 60 SOT-563 marking 7T switch and digital circuit application

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Product description

 

 

Q1  Collector-Base Voltage(VCBO)  50V
Q1Collector-Emitter Voltage(VCEO)  50V
Q1 Collector Current(IC)  -100MA/0.1A
Q2 Collector-Base Voltage(VCBO)  -50V
Q2Collector-Emitter Voltage(VCEO)  -50V
Q2Collector Current(IC)  -100MA/0.1A
Q1 Input Resistance(R1)   22KΩ
Q1Base-Emitter Resistance(R2)   22KΩ
Q1(R1/R2) Q1 Resistance Ratio  1
Q2 Input Resistance(R1)   22KΩ
Q2Base-Emitter Resistance(R2)   22KΩ
Q2(R1/R2) Q2 Resistance Ratio  1
 DC Current Gain(hFE) Q1/Q2  60/60
Transtion Frequency(fT) Q1/Q2  150MHZ/80MHZ
 Power Dissipation  125MW/0.125W
Description & Applications
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2212 + UNR2112
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