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UP0421N009JN NPN+NPN Complex Bipolar Transistor 50V 0.1A HEF=80~400 SOT-563 marking FK switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
50V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Input Resistance(R1) | 4.7KΩ |
| Base-Emitter Resistance(R2) | 47KΩ |
| Base-Emitter Input Resistance Ratio (R1/R2) | 0.1 |
| DC Current Gain(hFE) | 80~400 |
| Transtion Frequency(fT) | 150MHZ |
| Power Dissipation （Pd） | 0.125W |
| Description & Applications | * Silicon NPN epitaxial planar type
* For switching
* For digital circuits
* Two elements incorporated into one package (Transistors with built-in resistor)
*Reducation of the mounting area and assembly cost by one half
* UNR221N × 2
|
| Technical Documentation Download | Read Online |
