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RN1111F NPN Bipolar Digital Transistor (BRT) 50V 100mA/0.1A 10k SOT-523/ESM marking XM switch inverting circuit interface circuit and driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)100mA/0.1A
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)
电阻比(R1/R2) Resistance Ratio
直流电流增益hFE DC Current Gain(hFE)120
截止频率fT Transtion Frequency(fT)250MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F
描述与应用开关,逆变电路,接口电路 和驱动器电路应用 借助内置的偏置电阻 简化电路设计 数量减少了零件和制造工艺 互补RN2110F,RN2111F的
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