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NP0450100ASO NPN Transistors(BJT) 60V 100mA/0.1A 150Mhz 180~390 300mV/0.3V SSMini6-F1 marking 5H

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
150Mhz
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
300mV/0.3V
耗散功率Pc
Power Dissipation
125mW/0.125W
Description & ApplicationsTwo elements incorporated into one package (Each transistor is separated) Two elements incorporated into one package (Each transistor is separated) SSS Mini type SSS Mini type 66-pin package, reduction of the mounting area and assembly -pin package, reduction of the mounting area and assembly cost by one half Maximum package height ( Maximum package height (00..44 mm) contributes to develop thinner equipments
描述与应用两个要素纳入一包(每个晶体管分隔)两个要素纳入一个包(每个晶体管分离) SSS迷你型SSS迷你型66引脚封装,减少安装面积和汇编引脚封装,减少安装面积和汇编 一半的费用 最大封装高度(最大封装高度(00.. 44毫米),有助于开发出更薄的设备
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