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UNR32A1001ER NPN Bipolar Digital Transistor (BRT) 50V 80mA 10k 10k SOT-723 marking FK digital circuit application

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V
集电极连续输出电流IC Collector Current(IC)80mA
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)35
截止频率fT Transtion Frequency(fT)150MHz
耗散功率Pc Power Dissipation0.1W/100mW
Description & ApplicationsSilicon NPN epitaxial planar transistor For digital circuits Features • Optimum for downsizing of the equipment and high-density mounting •Contribute for low power consumption
描述与应用NPN硅外延平面晶体管 用于数字电路 特性 •最佳的s缩小设备和高密度安装 •低功耗贡献
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