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BAS40-04-HT3-GS08 SBD Schottky Barrier Diodes 40V 200mA/0.2A 1V LLP75-3B marking 44 fast switch
| 反向电压Vr Reverse Voltage | 40V |
| 平均整流电流Io AVerage Rectified Current | 200mA/0.2A |
| 最大正向压降VF Forward Voltage(Vf) | 1V |
| 最大耗散功率Pd Power dissipation | 200MW/0.2W |
| Description & Applications | . These Schottky diodes feature very low turn-on voltage and fast switching. . These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. |
| 描述与应用 | 这些肖特基二极管具有非常低的导通电压和快速切换。 这些器件都受一个PN结保护环电压，如静电放电。 |
