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BF995A-GS08 MOSFET N-Channel 20V 30mA SOT-143 marking MB fast switch/low on-resistance

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$0.162
≤99
$0.146
≤499
$0.122
≤999
$0.105
≤2999
$0.097
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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage3.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN–Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Features Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance
描述与应用N沟道双栅MOS场效应四极管,耗尽模式 应用 输入和混频器的阶段,特别是调频和VHF电视调谐器,高达300 MHz。 特点 综合栅极保护二极管 高交叉调制性能 低噪声系数 高AGC范围 低反馈电容
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