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2SD814-R NPN Transistors(BJT) 150V 50mA 150MHz 130 ~ 220 1V SOT-23/SC-59 marking PR high breakdown voltage low frequency low noise amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
150V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
150V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
130 ~ 220
管压降VCE(sat)
Collector-Emitter Saturation Voltage
1V
耗散功率Pc
Power Dissipation
200mW/0.2W
Description & ApplicationsSilicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Features High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
描述与应用NPN硅外延平面型 对于高击穿电压的低频和低噪声放大 特点 高集电极发射极电压VCEO。 低噪声电压NV。 通过自动插入带包装盒包装
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