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2SD1621R NPN Transistors(BJT) 30V 2A 150MHz 100~200 180mV/0.18V SOT-89/PCP marking DDR high current switch amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
2A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
100~200
管压降VCE(sat)
Collector-Emitter Saturation Voltage
180mV/0.18V
耗散功率Pc
Power Dissipation
500mW/0.5W
Description & ApplicationsSilicon NPN epitaxial planer type darlington high current switching amplification Features * large current capacity and wide ASO * Low collector to emitter saturation voltage VCE(sat) * fast switch speed * adoption of FBET,MBIT processes
描述与应用NPN硅外延平面型达林顿 高电流开关放大 特点 *大电流容量,广ASO *低集电极到发射极饱和电压VCE(SAT) *开关速度快 *采用的FBET,MBIT进程
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