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PUMH9 NPN+NPN Complex Bipolar Transistor 50V 100mA R1=10KΩ R2=47KΩ SOT-363/SC-88 marking Ht9 switch and digital circuit application
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA |
| Q1基极输入电阻R1 Input Resistance(R1) | 10KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 0.21 |
| Q2基极输入电阻R1 Input Resistance(R1) | 10KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 47KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 0.21 |
| 直流电流增益hFE DC Current Gain(hFE) | 100 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.3W |
| Description & Applications | Features • NPN resistor-equipped double transistor • Transistors with built-in bias resistors (R1 typ. 10 kΩ and R2 typ. 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors. |
