PUMH9 NPN+NPN Complex Bipolar Transistor 50V 100mA R1=10KΩ R2=47KΩ SOT-363/SC-88 marking Ht9 switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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PUMH9 NPN+NPN Complex Bipolar Transistor 50V 100mA R1=10KΩ R2=47KΩ SOT-363/SC-88 marking Ht9 switch and digital circuit application

Model：PUMH9
Mark / screen / code / typing：Ht9
Manufacturer：
Date Code：06NOPB
Package：SOT-363/SC-88
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	50V
集电极连续输出电流IC Collector Current(IC)	100mA
Q1基极输入电阻R1 Input Resistance(R1)	10KΩ
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)	47KΩ
Q1电阻比(R1/R2) Q1 Resistance Ratio	0.21
Q2基极输入电阻R1 Input Resistance(R1)	10KΩ
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)	47KΩ
Q2电阻比(R1/R2) Q2 Resistance Ratio	0.21
直流电流增益hFE DC Current Gain(hFE)	100
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation	0.3W
Description & Applications	Features • NPN resistor-equipped double transistor • Transistors with built-in bias resistors (R1 typ. 10 kΩ and R2 typ. 47 kΩ) • No mutual interference between the transistors • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.

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