SI1501DL Complex FET 20V/-20V 250mA/-180mA SOT-363/SC70-6 marking rn|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI1501DL Complex FET 20V/-20V 250mA/-180mA SOT-363/SC70-6 marking rn

Model：SI1501DL
Mark / screen / code / typing：rn
Manufacturer：
Date Code：03+ 03+
Package：SOT-363/SC70-6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	20V/-20V
最大栅源极电压Vgs(±) Gate-Source Voltage	8V/8V
最大漏极电流Id Drain Current	250mA/-180mA
源漏极导通电阻Rds Drain-Source On-State Resistance	2Ω@ VGS =4.5V, ID =250mA/3.8Ω@ VGS =-4.5V, ID =-180mA
开启电压Vgs（th） Gate-Source Threshold Voltage	0.4~1.5V/-0.4~-1.5V
耗散功率Pd Power Dissipation	200mW/0.2W
Description & Applications	Complementary 20-V (D-S) Low-Threshold MOSFET
描述与应用	互补的20-V（D-S）低阈值MOSFET

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