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FSB749 PNP transistors(BJT) -35V -3A 100MHz 100~300 -600mV/-0.6V SOT-23/SC-59 marking 749 high current gain/low saturation voltage

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-35V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−25V
集电极连续输出电流IC
Collector Current(IC)
-3A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−600mV/-0.6V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous.
描述与应用低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达3A的连续。
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