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2SK3663 MOSFET N-Channel 20V 500mA/0.5A SOT-323/SC-70 marking G26 low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.38Ω/Ohm @300mA,4.5V
开启电压Vgs(th) Gate-Source Threshold Voltage0.5-1.5V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsMOS FIELD EFFECT TRANSISTOR N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING Features N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING 2.5 V drive available Low on-state resistance RDS(on)1 = 0.57 Ω MAX (VGS = 4.5 V, ID = 0.30 A) RDS(on)2 = 0.60 Ω MAX (VGS = 4.0 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX (VGS = 2.5 V, ID = 0.15 A)
描述与应用MOS场效应晶体管 N-沟道MOS场效应晶体管的开关 特性 N沟道MOS场效应晶体管 用于开关 2.5 V驱动器可用 低通态电阻 的RDS(on)= 0.57ΩMAX(VGS= 4.5 V,ID=0.30 A) RDS(on)=0.60Ω最大(VGS=4.0 V,ID=0.30) RDS(on)3= 0.88ΩMAX(VGS= 2.5V,ID=0.15 A)
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