RT3P11M PNP+PNP Complex Bipolar Transistor -50V -100mA HEF=50 R1=R2=10KΩ SOT-363/SC-88 marking P11 switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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RT3P11M PNP+PNP Complex Bipolar Transistor -50V -100mA HEF=50 R1=R2=10KΩ SOT-363/SC-88 marking P11 switch and digital circuit application

Model：RT3P11M
Mark / screen / code / typing：P11
Manufacturer：
Date Code：09NOPB 09+ROHS
Package：SOT-363/SC-88
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	-50V
V(BR) CEO Collector-Emitter Voltage	-50V
Collector Current(IC)	-100MA/-0.1A
Input Resistance(R1)	10KΩ
Base-Emitter Resistance(R2)	10KΩ
Base-Emitter Input Resistance Ratio (R1/R2)	1
DC Current Gain(hFE)	50
Transtion Frequency(fT)	150MHZ
Power Dissipation （Pd）	0.15W
Description & Applications	Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type RT3P11M is a composite transistor built with two RT1P141 in SC-88 package. Inverted circuit, switching circuit, interface circuit, driver circuit
Technical Documentation Download	Read Online

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