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RT3P11M PNP+PNP Complex Bipolar Transistor -50V -100mA HEF=50 R1=R2=10KΩ SOT-363/SC-88 marking P11 switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

 -50V

V(BR) CEO

Collector-Emitter Voltage

 -50V
Collector Current(IC) -100MA/-0.1A 
 Input Resistance(R1)  10KΩ
Base-Emitter Resistance(R2)  10KΩ
Base-Emitter Input Resistance Ratio (R1/R2)  1
DC Current Gain(hFE)  50
Transtion Frequency(fT)  150MHZ
Power Dissipation (Pd)  0.15W
Description & Applications  Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
RT3P11M is a composite transistor built with two 
RT1P141 in SC-88 package. 
 
Inverted circuit, switching circuit, 
interface circuit, driver circuit 
Technical Documentation Download Read Online

 

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