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FDG326P MOSFET P-Channel -20V -1.5A 0.105ohm SOT-363 marking 26

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-1.5A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.105Ω @-1.5A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.4--1.5V
耗散功率Pd
Power Dissipation		750mW/0.75W
Description & Applications• Low gate charge (3.5nC typical). • High performance trench technology for extremely low RDS(ON) • Compact industry standard SC70-6 surface mount package.
描述与应用•低栅极电荷（3.5nC典型值） •高性能沟道技术极低的RDS（ON） •紧凑型工业标准SC70-6表面贴装封装
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