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2SC5295J-R NPN Transistors(BJT) 15V 65mA 8.5Ghz 100~170 SOT-523/SC-75 marking 3SR low noise amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流IC Collector Current(IC) | 65mA |
| 截止频率fT Transtion Frequency(fT) | 8.5Ghz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~170 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | |
| 耗散功率Pc Power Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type 2 GHz band low-noise amplification ■ Features • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 2 GHz频段低噪声放大 ■特点 •高转换频率fT •低集电极输出电容（通用基础，输入开路）COB •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |
