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2SC5950GSL NPN Transistors(BJT) 60V 100mA/0.1A 100MHz 160~460 100mV/0.1V SOT-323/SC-70 marking 7MS
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| 截止频率fT Transtion Frequency(fT) | 100MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率Pc Power Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type For general amplifi cation Features Features * High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio hFFEE * mini typ package, allowing downsizing of the equipment and Smini typ package, allowing downsizing of the equipment and aautomatic utomatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于一般的扩增阳离子 特点特点 *高正向电流传输比h高正向电流传输比h高正向电流传输比hFFEE *迷你典型包装，允许缩减的设备和SMINI的典型包装允许设备和A自动utomatic的瘦身 通过磁带插入包装 |
