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RT1A3906 PNP transistors(BJT) -60V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23 marking 2W low-frequency voltageamplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
150mW/0.15W
Description & ApplicationsFOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) FEATURE Excellent linearity of DC forward gain. Super mini package for easy mounting Small collector to emitter saturation voltage. APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify application.
描述与应用对于低频放大应用 硅PNP外延型(迷你型), 特写 直流前锋出色的线性度获得。 超小型封装,便于安装 小集电极到发射极饱和电压。 应用 对于混合集成电路,小型机低频电压放大应用。
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