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RN47A5 NPN+PNP Complex Bipolar Digital Transistor 50V/-50V 100mA/-100mA 80/50 200mW/0.2W SOT-353/usv/SC70-5 marking 25 switching inverting interface driver circuit

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Product description
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)50V/-50V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)50V/-50V
集电极连续输出电流IC Collector Current(IC)100mA/-100mA
Q1基极输入电阻R1 Input Resistance(R1)47KΩ/Ohm
Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2)47KΩ/Ohm
Q1电阻比(R1/R2) Q1 Resistance Ratio1
Q2基极输入电阻R1 Input Resistance(R1)4.7KΩ/Ohm
Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
Q2电阻比(R1/R2) Q2 Resistance Ratio0.47
直流电流增益hFE DC Current Gain(hFE)80/50
截止频率fT Transtion Frequency(fT)250MHz/200MHz
耗散功率Pc Power Dissipation200mW/0.2W
Description & ApplicationsFeatures • TOSHIBA Transistor Silicon NPN·PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) • Two devices are incorporated into an Ultra-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count.Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. Applications • Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
描述与应用特点 •东芝晶体管的硅NPN·PNP外延型的(PCT程序)(偏置电阻晶体管) •两个设备都纳入一个超超级迷你(5针)封装。 •将偏置电阻晶体管,减少了部件数量。减少零件数,使制造比以往更紧凑的设备和装配成本。 应用 •开关,逆变电路,接口电路和驱动器电路应用
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