My order
Share to:  
Location：Home > Stock Inventory > Product Details

FDN352AP MOSFET P-Channel -30V -1.3A 0.15ohm SOT-23 marking 52ap

Hot selling goods

Product description
最大源漏极电压Vds
Drain-Source Voltage		-30V
最大栅源极电压Vgs(±)
Gate-Source Voltage		25V
最大漏极电流Id
Drain Current		-1.3A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.15Ω @-1.3A,-10V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.8--2.5V
耗散功率Pd
Power Dissipation		500mW/0.5W
Description & Applications High performance trench technology for extremely low RDS(ON) .High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.
描述与应用高性能沟道技术极低 RDS（ON） 行业标准SOT-23封装的高功率版本。 相同的引脚SOT-23的30％更高的功率处理能力
List of related models

Record / license number：粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00