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MMBF170-7 MOSFET N-Channel 60V 500mA/0.5A SOT-23/SC-59 marking K6Z fast switch/low on-resistance/low-voltage drive
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 500mA/0.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm @200mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-3.0V |
| 耗散功率Pd Power Dissipation | 300mW/0.3W |
| Description & Applications | Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features High density cell design for low RDS(ON) .Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. |
| 描述与应用 | 功率MOSFET 500毫安，60 V N沟道SOT-23 高密度电池设计的低RDS（ON） 电压控制小信号开关 坚固，可靠。 高饱和电流能力 |
