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BSS284 MOSFET P-Channel -50V -130mA 5ohm SOT-23 marking SSD

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Product description
最大源漏极电压Vds
Drain-Source Voltage
-50V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-0.13A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
5Ω @-130mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.8--1.8V
耗散功率Pd
Power Dissipation
360mW/0.36W
Description & ApplicationsSIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th)= -0.8...-1.6 V
描述与应用SIPMOS®小信号晶体管 •P沟道 •增强模式 •逻辑电平 •VGS(TH)=-0.8...-1.6 V
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