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UPA831TF NPN+NPN Complex Bipolar Transistor 20V 100mA/65mA 100~145/70~150 SOT-363/SC-88 marking V24 switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

   Q1/Q2=20V/20V

V(BR) CEO

Collector-Emitter Voltage

  Q1/Q2=12V/10V
Collector Current(IC)  Q1/Q2=100MA/65MA
Transtion Frequency(fT)  Q1/Q2=4.5GHZ/7GHZ
DC Current Gain(hFE)  Q1/Q2=100~150/70~150

VCE (sat)

Collector-Emitter Saturation Voltage

  
Power Dissipation （Pd）  200MW
Description & Applications  NPN SILICON EPITAXIAL TWIN TRANSISTOR
• LOW NOISE:
Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:
Q1: |S21E|
2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
Q2: |S21E|
2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,
lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS
(Q1: NE856, Q2: NE681)
Technical Documentation Download Read Online
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