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MMBT3906LT1 PNP transistors(BJT) -40V -200mA/-0.2A 250MHz 100~300 -400mV/-0.4V SOT-23/SC-59 marking 2A high DC current gain

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−40V
集电极连续输出电流IC
Collector Current(IC)
−200mA/-0.2A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-400mV/-0.4V
耗散功率Pc
PoWer Dissipation
330mW/0.33W
Description & ApplicationsPNP Silicon Switching Transistor • High DC current gain • Low collector-emitter saturation voltage • Complementary to MMBT3904
描述与应用PNP硅开关晶体管 •高直流电流增益 •低集电极 - 发射极饱和电压 •互补型MMBT3904
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