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HN4C06J-GR NPN+NPN Complex Bipolar Transistor 120V 100mA HEF=200~700 SOT-153/SMV marking DG switch and digital circuit application

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Product description

V(BR) CBO

Collector-Base Voltage

  120V

V(BR) CEO

Collector-Emitter Voltage

  120V
Collector Current(IC)  100MA/0.1A
Transtion Frequency(fT)  100MHZ
DC Current Gain(hFE)  200~700

VCE (sat)

Collector-Emitter Saturation Voltage

  0.3V
Power Dissipation （Pd）  0.3W
Description & Applications  Features• TOSHIBA Transistor  Silicon NPN Epitaxial Type (PCT Process)• High voltage : VCEO = 120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) • Low noise : NF = 1dB(typ.)• Audio Frequency General Purpose Amplifier Applications 
 
 
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