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HN4C06J-GR NPN+NPN Complex Bipolar Transistor 120V 100mA HEF=200~700 SOT-153/SMV marking DG switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
120V |
|
V(BR) CEO Collector-Emitter Voltage |
120V |
| Collector Current(IC) | 100MA/0.1A |
| Transtion Frequency(fT) | 100MHZ |
| DC Current Gain(hFE) | 200~700 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.3V |
| Power Dissipation （Pd） | 0.3W |
| Description & Applications | Features• TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)• High voltage : VCEO = 120V • High hFE : hFE = 200~700 • Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) • Low noise : NF = 1dB(typ.)• Audio Frequency General Purpose Amplifier Applications
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| Technical Documentation Download | Read Online |
