RJK002N06 MOSFET N-Channel 60v 2A SOT-89 marking ML low gate chargefast switch/ESD protection gate|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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RJK002N06 MOSFET N-Channel 60v 2A SOT-89 marking ML low gate chargefast switch/ESD protection gate

Model：RJK002N06
Mark / screen / code / typing：ML
Manufacturer：
Date Code：05NOPB 05+ROHS
Package：SOT-89/SC-62/MPT3
Standard Package：1000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	60v
最大栅源极电压Vgs(±) Gate-Source Voltage	20v
最大漏极电流Id Drain Current	2A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance	0.2Ω/Ohm @20A,10V
开启电压Vgs（th） Gate-Source Threshold Voltage	1.0-2.5V
耗散功率Pd Power Dissipation	500mW/0.5W
Description & Applications	4V Drive Nch MOS FET Silicon N-channel MOS FET Low On-resistance. High speed switching. Wide SOA.
描述与应用	4V驱动N沟道MOS FET 硅N沟道MOS FET 低导通电阻。高速开关。宽SOA

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