My order
Share to:  
Location:Home > Stock Inventory > Product Details

SSM6K25FE MOSFET N-Channel 20V 500mA/0.5A SOT-563/ES6 marking NH low on-resistance/fast switch/low threshold voltage/low gate driver

Hot selling goods

Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance145mΩ@ VGS = 4.0V, ID = 250mA
开启电压Vgs(th) Gate-Source Threshold Voltage0.5~1.1V
耗散功率Pd Power Dissipation500mW/0.5W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) High Speed Switching Applications • Optimum for high-density mounting in small packages • Low on-resistance: Ron = 395mΩ (max) (@VGS = 1.8 V) Ron = 190mΩ (max) (@VGS = 2.5 V) Ron = 145mΩ (max) (@VGS = 4.0 V)
描述与应用东芝场效应晶体管硅N沟道MOS类型(U-MOSIII) 高速开关应用 •最适用于高密度安装在小包装 •低导通电阻RON =395mΩ(最大)(@ VGS=1.8 V) RON=190mΩ(最大)(@ VGS= 2.5 V) RON =145mΩ(最大)(@ VGS=4.0 V)
List of related models

Record / license number:粤ICP备14038557号 Copyright ©: 2018 Eric Online Store Copyright ownership and reservation of all rights
Tel:86-755-88869068
Working hours: Mon to Sat 8: 00 ~ 22: 00