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2SK3653B JFET N-Channel 20v 0.09~0.18mA SOT-523 marking CE radio and telephone

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.09~0.18ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.37~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & ApplicationsN-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Super thin thickness package: t = 0.37 mm TYP.
描述与应用•硅N沟道结型场效应管 驻极体电容式麦克风 - 非常适于微型麦克风CSP封装的1.0×0.6×0.38亿吨 •优秀的降低电压特性 ·出色的瞬态响应
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