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TND731E4 MOSFET P-Channel ECSP1208-4 marking AT ultra small package Electret Condenser Microphone application
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | |
| Description & Applications | P-Channel Silicon MOSFET Electret Condenser Microphone Applications Ultrasmall package permitting applied sets to be small and slim Especially suited for use in electret condenser microphone for audio equipments and telephones Excellent voltage characteristics Excellent noise characteristics |
| 描述与应用 | P-沟道硅MOSFET 驻极体电容式麦克风应用 超小封装允许应用设置小巧玲珑 特别适合于使用在驻极体电容传声器的音响设备和电话 优秀的电压特性 卓越的噪声特性 |
