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SSM3K104TU MOSFET N-Channel 20V 3A SOT-323/SC-70/USM marking KK4 ESD protection/low on-resistance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.056Ω/Ohm @2A,4V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.4-1.0V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 电源管理开关应用 高速开关应用 •1.8 V驱动器 •低导通电阻 |
