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NTR1P02LT1 MOSFET P-Channel -20V -1.3A 0.135ohm SOT-23 marking P02 high efficiency extending battery life
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -1.3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.135Ω @-700mA,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.7--1.253 |
| 耗散功率Pd Power Dissipation | 400mW/0.4W |
| Description & Applications | Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available |
| 描述与应用 | •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 •无铅包装是可用 |
