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MMBT2369 NPN Transistors(BJT) 40V 200mA/0.2A 40~120 200mV~500mV SOT-23/SC-59 marking 1J switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
40~120
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200mV~500mV
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsNPN Switching Transistor This device is designed for high speed saturation switching at collector currents of 10 mA to 100 mA. Sourced from Process 21.
描述与应用NPN开关晶体管 该设备是专为高速饱和开关集电极 10 mA至100 mA的电流
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