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MMBTA63 PNP transistors(BJT) -30V -1.2A 125MHz 10000 -1.5V SOT-23/SC-59 marking 2U

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−30V
集电极连续输出电流IC
Collector Current(IC)
-1.2A
截止频率fT
Transtion Frequency(fT)
125MHz
直流电流增益hFE
DC Current Gain(hFE)
10000
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-1.5V
耗散功率Pc
PoWer Dissipation
350mW/0.35W
Description & ApplicationsPNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA.
描述与应用PNP达林顿晶体管 该设备是专为要求极高的电流为800毫安的电流增益的应用而设计。
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