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BSS119 MOSFET N-Channel 1.7A SOT-23/SC-59 marking SH fast switch/Logic level compatible
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 1.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 3.4Ω/Ohm @1.7A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-2.3V |
| 耗散功率Pd Power Dissipation | 360mW/0.36W |
| Description & Applications | SIPMOS Small-Signal-Transistor • N-Channel • Enhancement mode • Logic Level • dv/dt rated |
| 描述与应用 | SIPMOS小信号晶体管 •N沟道 •增强模式 •逻辑电平 •dv /dt的额定 |
