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SI1024X Complex FET 20V 485mA/0.485A SOT-563/SC-89 marking CB ESD protection load switch power converter

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
6V
最大漏极电流Id
Drain Current
485mA/0.485A
源漏极导通电阻Rds
Drain-Source On-State Resistance
1.25Ω@ VGS =1.8V, ID =350mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.45V
耗散功率Pd
Power Dissipation
250mW/0.25W
Description & ApplicationsDual N-Channel 20-V (D-S) MOSFET Feature Very Small Footprint High-Side Switching Low On-Resistance: 1.2 Low Threshold: 0.8 V (typ) Fast Switching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection Application Drivers: Relays, Solenoids, Lamps,Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers
描述与应用双N沟道20-V(D-S)的MOSFET 特点 非常小的足迹 高边开关 低导通电阻:1.2 低阈值:0.8 V(典型值) 快速开关速度:14纳秒 1.8-V操作 门源ESD保护 应用 驱动:继电器,螺线管,灯,锤子,显示器,记忆 电池供电系统 电源转换器电路 负载/功率开关手机,寻呼机
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