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BC847CLT1G NPN Transistors(BJT) 50V 100mA/0.1A 100MHz 420~800 200~600 mV SOT-23/SC-59 marking 1G

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
45V
集电极连续输出电流IC
Collector Current(IC)
100mA/0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
420~800
管压降VCE(sat)
Collector-Emitter Saturation Voltage
200~600 mV
耗散功率Pc
Power Dissipation
225mW/0.225W
Description & ApplicationsFeatures • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V ESD Rating − Machine Model: >400 V • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
描述与应用特点 •湿度敏感度等级:1 •ESD额定值 - 人体模型:>4000 V ESD额定值 - 机器型号:> 400 V •这些器件是无铅,无卤,无 BFR
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