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S525T-GS08 MOSFET N-Channel 20V 30mA SOT-23/SC-59 marking LB fast switch/low on-resistance

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current30mA
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance
开启电压Vgs(th) Gate-Source Threshold Voltage7.5-12V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsN-Channel MOS-Fieldeffect Triode, Depletion Mode High frequency stages up to 300 MHz. • Integrated gate protection diodes • Low feedback capacitance • Low noise figure • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
描述与应用N沟道MOS场效应三极管,耗尽模式 高达300 MHz的高频阶段 •集成的栅极保护二极管 •低反馈电容 •低噪声系数 •铅(Pb)免费组件
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