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SCH2810-S-TL-E complex FET MOSFET+schottky diode -12V -1.3A 500mA/0.5A 0.46V SOT-563/SCH6 marking QK low on-resistance/ultra high-speed switch/short reverse recovery time/low forward voltage
最大源漏极电压Vds Drain-Source Voltage | P沟道 P-Channel |
最大栅源极电压Vgs(±) Gate-Source Voltage | -12V |
最大漏极电流Id Drain Current | -12V |
源漏极导通电阻Rds Drain-Source On-State Resistance | -1.3A |
开启电压Vgs(th) Gate-Source Threshold Voltage | 270mΩ@ VGS =-10V, ID =-700mA |
耗散功率Pd Power Dissipation | -1.0~-2.4V |
Description & Applications | 肖特基二极管SBD Schottky Barrier Diodes |
描述与应用 | 15V |