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SSM6K06FU MOSFET N-Channel 20V 1.1A SOT-363/SC70-6/TSSOP6/SC-88/US6 marking KDA fast switch/low on-resistance/Low Gate Threshold Voltage

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage12V
最大漏极电流Id Drain Current1.1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.16Ω/Ohm @500mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.6-1.1V
耗散功率Pd Power Dissipation300mW/0.3W
Description & ApplicationsHigh Speed Switching Applications Small package Low on resistance : Ron = 160 mΩ max (@VGS = 4 V) Ron = 210 mΩ max (@VGS = 2.5 V) Low gate threshold voltage
描述与应用高速开关应用 小型封装 低导通电阻RON =160mΩ最大(@ VGS=4 V) RON =210mΩ最大(@ VGS= 2.5 V) 低栅极阈值电压
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