FMB5551 NPN+NPN Complex Bipolar Transistor 180V 0.6A HEF=30~250 SOT-163 marking 3SG switch and digital circuit application|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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FMB5551 NPN+NPN Complex Bipolar Transistor 180V 0.6A HEF=30~250 SOT-163 marking 3SG switch and digital circuit application

Model：FMB5551
Mark / screen / code / typing：3SG
Manufacturer：
Date Code：nopb 06NOPB
Package：SOT-163
Standard Package：3000
Min Order：10

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Product description

V(BR) CBO Collector-Base Voltage	180V
V(BR) CEO Collector-Emitter Voltage	160V
Collector Current(IC)	600MA
Transtion Frequency(fT)	300MHZ
DC Current Gain(hFE)	30~250
VCE (sat) Collector-Emitter Saturation Voltage	0.2V
Power Dissipation （Pd）	0.7W
Description & Applications	NPN General Purpose Amplifier SuperSOT-6 Surface Mount Package • This device is designed for general purpose high voltage amplifiers and gas discharge display driving. • Sourced from process 16. • See MMBT5551 for characteristics.
Technical Documentation Download	Read Online

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