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PMBFJ174 JFET P-Channel 30 V =K40-20.0~-135.0mA SOT-23 marking W6X

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Product description
最大源漏极电压Vds
Drain-Source Voltage
30 V
栅源极击穿电压V(BR)GS
Gate-Source Voltage
30 V
漏极电流(Vgs=0V)IDSS
Drain Current
-20.0~-135.0mA
关断电压Vgs(off)
Gate-Source Cut-off Voltage
5.0~10.0V
耗散功率Pd
Power Dissipation
300mW/0.3W
Description & ApplicationsPMBFJ174 P-channel silicon field-effect transistors DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.
描述与应用PMBFJ174 P-沟道硅场效应晶体管 说明 硅对称p沟道结场效应晶体管的塑料超小型SOT23封装。他们的目的是为应用模拟开关,换向器等采用SMD技术。比较特别的是漏极和源极连接的互换性。
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