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LMBR130T1G SBD Schottky Barrier Diodes 30V 1A 470mV/0.47V SOD-123/1206 marking S3 power rectifier
| 反向电压Vr Reverse Voltage | 30V |
| 平均整流电流Io AVerage Rectified Current | 1A |
| 最大正向压降VF Forward Voltage(Vf) | 470mV/0.47V |
| 最大耗散功率Pd Power dissipation | |
| Description & Applications | • This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection • Guardring for Stress Protection • Low Forward Voltage • Surface Mount Schottky Power Rectifier |
| 描述与应用 | •金属硅功率二极管采用肖特基原则。非常适合于低电压，高频率整流，或者作为续流和极性保护。 •Guardring应力保护 •低正向电压 •表面贴装肖特基功率整流器 |
