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2SC560900L NPN Transistors(BJT) 60V 200mA/0.2A 180~390 100mV/0.1V sot-723 marking 3F amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
200mA/0.2A
截止频率fT
Transtion Frequency(fT)
直流电流增益hFE
DC Current Gain(hFE)
180~390
管压降VCE(sat)
Collector-Emitter Saturation Voltage
100mV/0.1V
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & ApplicationsSilicon PNP epitaxial planer type For general amplification Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing
描述与应用硅PNP外延刨床类型 对于一般的放大 特点 •高电流传输比HFE FOWARD •SSS迷你型封装,允许裁员和变薄 带包装的设备,通过自动插入
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