MMBT2222LT1G NPN Transistors(BJT) 60V 600mA/0.6a 250Mh~300Mhz 30~300 0.4V~1.6V SOT-23/SC-59 marking M1B|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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MMBT2222LT1G NPN Transistors(BJT) 60V 600mA/0.6a 250Mh~300Mhz 30~300 0.4V~1.6V SOT-23/SC-59 marking M1B

Model：MMBT2222LT1G
Mark / screen / code / typing：M1B
Manufacturer：
Date Code：09+ROHS
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	30V
集电极连续输出电流IC Collector Current(IC)	600mA/0.6A
截止频率fT Transtion Frequency(fT)	250Mh~300Mhz
直流电流增益hFE DC Current Gain(hFE)	30~300
管压降VCE（sat） Collector-Emitter Saturation Voltage	0.4V~1.6V
耗散功率Pc Power Dissipation	225mW/0.225W
Description & Applications	Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish
描述与应用	可能提供无铅封装。 G-后缀表示无铅牵头完成

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