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3HN04MH MOSFET N-Channel 30V 300mA/0.3A SOT-323/SC-70 marking LZ low on-resistance/fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.66Ω/Ohm @150mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2.6V |
| 耗散功率Pd Power Dissipation | 600mW/0.6W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features Silicon N-Channel MOS FET General-Purpose Switching Device Applications 4V drive |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 特性 硅N沟道MOS FET 通用开关设备应用 4V驱动 |
