MMBT3904-G NPN Transistors(BJT) 60V 200mA/0.2A 250Mhz 100~300 300mV/0.3V SOT-23/SC-59 marking 1AM|Welcome to Eric Online Store - SHEN ZHEN ERIC ELECTRONICS TECHNOLOGY LIMITED

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MMBT3904-G NPN Transistors(BJT) 60V 200mA/0.2A 250Mhz 100~300 300mV/0.3V SOT-23/SC-59 marking 1AM

Model：MMBT3904-G
Mark / screen / code / typing：1AM
Manufacturer：
Date Code：07NOPB
Package：SOT-23/SC-59
Standard Package：3000
Min Order：10

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Product description

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)	60V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)	40V
集电极连续输出电流IC Collector Current(IC)	200mA/0.2A
截止频率fT Transtion Frequency(fT)	250Mhz
直流电流增益hFE DC Current Gain(hFE)	100~300
管压降VCE（sat） Collector-Emitter Saturation Voltage	300mV/0.3V
耗散功率Pc Power Dissipation
Description & Applications	Epitaxial planar die construction -As complementary type,the PNP Q172transistor MMBT3906-G is recommended
描述与应用	外延平面模施工作为互补型，PNP 建议晶体管MMBT3906-G

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