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MMBTH10 NPN Transistors(BJT) 30V 50mA 650Mhz 60 500mV/0.5V SOT-23/SC-59 marking 3E low noise UHF/VHF amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
30V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
50mA
截止频率fT
Transtion Frequency(fT)
650Mhz
直流电流增益hFE
DC Current Gain(hFE)
60
管压降VCE(sat)
Collector-Emitter Saturation Voltage
500mV/0.5V
耗散功率Pc
Power Dissipation
300mW/0.3W
Description & ApplicationsNPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 µA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
描述与应用NPN RF晶体管 这个装置是专为使用低噪音UHF/ VHF放大器, 与集电极电流在100μA到20 mA范围内共同 发射器或共同经营的基本模式,并在低频 漂移,高输出UHF振荡器
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