SI3457CDV-T1-GE3 MOSFET P-Channel -30V -4.1A 0.060ohm SOT-163 marking ATO|Welcome to Eric Online Store - Shenzhen ERIC Electronics Co., Ltd.

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SI3457CDV-T1-GE3 MOSFET P-Channel -30V -4.1A 0.060ohm SOT-163 marking ATO

Model：SI3457CDV-T1-GE3
Mark / screen / code / typing：ATO
Manufacturer：
Date Code：10NOPB
Package：SOT-163/SOT23-6/TSOP6
Standard Package：3000
Min Order：10

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Product description

最大源漏极电压Vds Drain-Source Voltage	-30V
最大栅源极电压Vgs(±) Gate-Source Voltage	20V
最大漏极电流Id Drain Current	-4.1A/-0.1A
源漏极导通电阻Rds Drain-Source On-State Resistance	0.060Ω @-4.1A,-10V
开启电压Vgs（th） Gate-Source Threshold Voltage	-1.0--3.0V
耗散功率Pd Power Dissipation	2W
Description & Applications	FEATURES TrenchFET Power MOSFET
描述与应用	功率MOSFET

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